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E2Q0027-38-72 electronic components
This version: Jul. 1998 Previous version: Jan. 1998 KGF1284
electronic components KGF1284
Power FET (Plastic Package Type)
GENERAL DESCRIPTION
The KGF1284, housed in a SOT-89 type plastic-mold package, is a discrete power FET with frequencies ranging from the UHF-to L-band. This device features high efficiency, high output power, and high gain. The KGF1284 specifications are guaranteed to a fixed matching circuit for 3.4 V and 1.9 GHz; external impedance-matching circuits are also required. Because of its high efficiency, high output power (more than 21.5 dBm), high gain, and plastic package, the KGF1284 is ideal as a transmitter-driver amplifier for personal handy phones, such as digital keying cordless phones.
FEATURES
* Specifications guaranteed to a fixed matching circuit for 3.4 V, 1.9 GHz * High output power: 21.5 dBm (min.) at 1.9 GHz * High efficiency: 50% (typ.) at 1.9 GHz * High linear gain: 12 dB (typ.) at 1.9 GHz * Package: 3PMMP (SOT-89 type)
PACKAGE DIMENSIONS
4.50.1 1.6 +0.15 -0.10 1.50.1
2.50.1 10.2
40.2
0.48 +0.08 -0.05 0.4
+0.08 -0.05
0.390.05 0.4
+0.08 -0.05
Package material Lead frame material Pin treatment Solder plate thickness
Epoxy resin Cu Solder plating 5 mm or more
1.50.1 1.50.1 30.1
(Unit: mm)
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KGF1284
MARKING
(1)
D2 XX
PRODUCT TYPE
(2) LOT NUMBER (NUMERICAL or ALPHABETICAL)
(3)
(1) Gate (2) Source (3) Drain
CIRCUIT
Drain(3)
Gate(1)
Source(2)
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KGF1284
ABSOLUTE MAXIMUM RATINGS
Item Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature Symbol VDS VGS IDS Ptot Tch Tstg Condition Ta = 25C Ta = 25C Ta = 25C Ta = Tc = 25C -- -- Unit V V A W C C Min. -- -5.0 -- -- -- -45 Max. 7.0 0.4 0.8 2.5 150 125
ELECTRICAL CHARACTERISTICS
(Ta = 25C) Item Gate-source leakage current Gate-drain leakage current Drain-source leakage current Drain current Gate-source cut-off voltage Output power Drain efficiency Linear gain Thermal resistance Symbol IGSS IGDO IDS(off) IDSS VGS(off) PO hD GLIN Rth Condition VGS = -5 V VGD = -12 V VDS = 7 V, VGS = -5 V VDS = 1.5 V, VGS = 0 V VDS = 3 V, IDS = 1.4 mA (*1), PIN = 12 dBm (*1), PIN = 12 dBm (*1), PIN = -5 dBm Channel to case Unit mA mA mA mA V dBm % dB C/W Min. -- -- -- 450 -3.0 21.5 45 -- -- Typ. -- -- -- -- -- 22.5 50 12.0 35 Max. 50 150 500 -- -2.0 -- -- -- --
*1 Condition: f = 1.9 GHz, VDS = 3.4 V, IDSQ = 70 mA
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RF CHARACTERISTICS
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Typical S Parameters
VDS = 3.4 V, VGS = -1.50 V, IDS = 70 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0 1700.0 1800.0 1900.0 2000.0 2100.0 2200.0 2300.0 2400.0 2500.0 2600.0 2700.0 2800.0 2900.0 3000.0 0.929 0.912 0.898 0.883 0.876 0.866 0.859 0.851 0.844 0.838 0.832 0.825 0.819 0.812 0.806 0.799 0.793 0.785 0.778 0.771 0.764 0.758 0.750 0.742 0.736 0.733 -78.89 -90.54 -100.54 -109.32 -117.13 -123.86 -130.11 -135.65 -140.78 -145.60 -149.99 -154.26 -158.20 -161.99 -165.60 -169.02 -172.66 -175.81 -178.99 177.76 174.95 171.70 168.79 165.98 163.16 160.53 5.276 5.192 4.906 4.758 4.432 4.255 4.020 3.790 3.588 3.381 3.226 3.066 2.908 2.809 2.666 2.570 2.470 2.367 2.285 2.194 2.129 2.067 1.991 1.932 1.854 1.808 128.00 120.39 113.48 107.25 102.09 96.87 92.12 87.84 83.54 79.70 75.89 72.32 68.85 65.26 61.68 58.72 54.67 52.14 48.53 45.78 42.86 39.50 36.47 33.51 30.44 27.91 0.042 0.047 0.051 0.055 0.057 0.060 0.062 0.064 0.065 0.067 0.069 0.070 0.072 0.073 0.074 0.076 0.077 0.078 0.080 0.080 0.082 0.082 0.085 0.085 0.087 0.087 51.45 46.56 42.16 38.55 35.18 32.38 30.00 27.73 25.74 23.56 22.15 20.26 18.89 17.33 16.01 14.72 13.41 12.04 10.71 9.42 8.56 7.12 5.91 4.43 2.92 1.82 0.267 0.290 0.309 0.323 0.335 0.343 0.350 0.355 0.360 0.363 0.364 0.366 0.366 0.369 0.366 0.369 0.366 0.367 0.365 0.365 0.364 0.361 0.360 0.359 0.358 0.360 -148.33 -151.44 -153.97 -156.56 -158.61 -160.77 -162.66 -164.65 -166.30 -168.00 -169.53 -171.09 -172.68 -174.12 -175.62 -177.03 -178.53 179.93 178.65 177.06 175.54 174.11 172.44 171.33 169.80 168.19
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Typical S Parameters
VDS = 3.4 V, VGS = -1.50 V, IDS = 70 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W
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KGF1284
Test Circuit and Bias Configuration for KGF1284 at 1.9 GHz
VGS
CF
CB
CB
CF
VDS
RFC IN CC C1
T1
T2
T3
(1) (2)
(3)
T4
T5
T6
RFC OUT CC C2
f = 1.9 GHz T1: Z0 = 80 W, E = 53 deg T4: Z0 = 30 W, E = 53 deg T2: Z0 = 10 W, E = 32 deg T5: Z0 = 12 W, E = 32 deg T3: Z0 = 30 W, E = 53 deg T6: Z0 = 50 W, E = 54 deg C1 = 1.0 pF, C2 = 2.0 pF CC = 1000 pF, CF = 1000 pF, CB = 1000 pF, RFC = 60 nH
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